Harris Corporation MWS5114D2
| Parameters | |
|---|---|
| Mfr | Harris Corporation |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous |
| Memory Size | 4Kbit |
| Memory Organization | 1K x 4 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 250ns |
| Access Time | 250 ns |
| Voltage - Supply | 4.5V ~ 6.5V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 18-CDIP (0.300", 7.62mm) |
| Supplier Device Package | 18-SBDIP |
| Base Product Number | MWS5114 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | Vendor Undefined |
| ECCN | EAR99 |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
SRAM - Synchronous Memory IC 4Kbit Parallel 250 ns 18-SBDIP
