Micron Technology Inc. NAND512W3A2SE06
| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 50ns |
| Access Time | 50 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Package / Case | - |
| Supplier Device Package | - |
| Base Product Number | NAND512 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
| Standard Package | 1,000 |
FLASH - NAND Memory IC 512Mbit Parallel 50 ns
