Cypress Semiconductor Corp CY7C199-35SI
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| Parameters | |
|---|---|
| Mfr | Cypress Semiconductor Corp |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 256Kbit |
| Memory Organization | 32K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 35ns |
| Access Time | 35 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Base Product Number | CY7C199 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Affected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns
