GigaDevice Semiconductor (HK) Limited GD25S512MDBIGY
| Parameters | |
|---|---|
| Mfr | GigaDevice Semiconductor (HK) Limited |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | SPI - Quad I/O |
| Clock Frequency | 104 MHz |
| Write Cycle Time - Word, Page | 50µs, 2.4ms |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 24-TBGA |
| Supplier Device Package | 24-TFBGA (6x8) |
| Base Product Number | GD25S512 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
| Standard Package | 4,800 |
FLASH - NOR Memory IC 512Mbit SPI - Quad I/O 104 MHz 24-TFBGA (6x8)
