Infineon Technologies 2ED2110S06MXUMA1
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Conevo-Key Programmable | Not Verified |
| Driven Configuration | High-Side and Low-Side |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 6V, 14V |
| Current - Peak Output (Source, Sink) | 2.5A, 2.5A |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 650 V |
| Rise / Fall Time (Typ) | 25ns, 17ns |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package | 16-SOIC |
| Base Product Number | 2ED2110 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.39.0001 |
| Standard Package | 1,000 |
High-Side and Low-Side Gate Driver IC Non-Inverting 16-SOIC
