Infineon Technologies CY14B104NA-BA20XI

CY14B104NA-BA20XI


  • Manufacturer: Infineon Technologies
  • CONEVO NO: CY14B104NA-BA20XI
  • Package: 48-TFBGA
  • Datasheet: PDF
  • Stock: In stock
  • Description: CY14B104NA-BA20XI(Kg)

Details

Tags

Parameters
Mfr Infineon Technologies
Series -
Package Tray
Product Status Active
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 20ns
Access Time 20 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFBGA
Supplier Device Package 48-FBGA (6x10)
Base Product Number CY14B104
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Standard Package 598
NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 20 ns 48-FBGA (6x10)
Contact Information
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