Infineon Technologies CY14B116S-BZ35XI
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 16Mbit |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 35ns |
| Access Time | 35 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-LBGA |
| Supplier Device Package | 165-FBGA (15x17) |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Unaffected |
| Standard Package | 105 |
NVSRAM (Non-Volatile SRAM) Memory IC 16Mbit Parallel 35 ns 165-FBGA (15x17)
