Infineon Technologies CY14E116L-ZS25XI
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 16Mbit |
| Memory Organization | 2M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 44-TSOP II |
| Base Product Number | CY14E116 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 675 |
NVSRAM (Non-Volatile SRAM) Memory IC 16Mbit Parallel 25 ns 44-TSOP II
