Parameters |
ECCN |
EAR99 |
HTSUS |
8542.32.0071 |
Standard Package |
1,350 |
Mfr |
Infineon Technologies |
Series |
Automotive, AEC-Q100, F-RAM™ |
Package |
Tray |
Product Status |
Active |
Memory Type |
Non-Volatile |
Memory Format |
FRAM |
Technology |
FRAM (Ferroelectric RAM) |
Memory Size |
2Mbit |
Memory Organization |
128K x 16 |
Memory Interface |
Parallel |
Write Cycle Time - Word, Page |
90ns |
Access Time |
90 ns |
Voltage - Supply |
2V ~ 3.6V |
Operating Temperature |
-40°C ~ 85°C (TA) |
Mounting Type |
Surface Mount |
Package / Case |
44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package |
44-TSOP II |
Base Product Number |
CY15B102 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
REACH Status |
REACH Unaffected |
FRAM (Ferroelectric RAM) Memory IC 2Mbit Parallel 90 ns 44-TSOP II