Infineon Technologies CY7C1314JV18-250BZXC

CY7C1314JV18-250BZXC


  • Manufacturer: Infineon Technologies
  • CONEVO NO: CY7C1314JV18-250BZXC
  • Package: 165-LBGA
  • Datasheet: PDF
  • Stock: In stock
  • Description: CY7C1314JV18-250BZXC(Kg)

Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Standard Package 136
Mfr Infineon Technologies
Series -
Package Tray
Product Status Obsolete
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, QDR II
Memory Size 18Mbit
Memory Organization 512K x 36
Memory Interface Parallel
Clock Frequency 250 MHz
Write Cycle Time - Word, Page -
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 165-LBGA
Supplier Device Package 165-FBGA (13x15)
Base Product Number CY7C1314
RoHS Status ROHS3 Compliant
SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 165-FBGA (13x15)
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