Parameters |
Mfr |
Infineon Technologies |
Series |
NoBL™ |
Package |
Tray |
Product Status |
Obsolete |
Memory Type |
Volatile |
Memory Format |
SRAM |
Technology |
SRAM - Synchronous, SDR |
Memory Size |
9Mbit |
Memory Organization |
256K x 36 |
Memory Interface |
Parallel |
Clock Frequency |
200 MHz |
Write Cycle Time - Word, Page |
- |
Access Time |
3.2 ns |
Voltage - Supply |
3.135V ~ 3.6V |
Operating Temperature |
-40°C ~ 85°C (TA) |
Mounting Type |
Surface Mount |
Package / Case |
100-LQFP |
Supplier Device Package |
100-TQFP (14x20) |
Base Product Number |
CY7C1354 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
REACH Status |
REACH Unaffected |
ECCN |
3A991B2A |
HTSUS |
8542.32.0041 |
Standard Package |
72 |
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.2 ns 100-TQFP (14x20)