Infineon Technologies CY7C2163KV18-550BZXI
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, QDR II+ |
| Memory Size | 18Mbit |
| Memory Organization | 1M x 18 |
| Memory Interface | Parallel |
| Clock Frequency | 550 MHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-LBGA |
| Supplier Device Package | 165-FBGA (13x15) |
| Base Product Number | CY7C2163 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 272 |
SRAM - Synchronous, QDR II+ Memory IC 18Mbit Parallel 550 MHz 165-FBGA (13x15)
