Infineon Technologies CY7S1061G18-15ZSXI
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 16Mbit |
| Memory Organization | 1M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 15 ns |
| Voltage - Supply | 1.65V ~ 2.2V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Base Product Number | CY7S1061 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 1,080 |
SRAM - Synchronous, SDR Memory IC 16Mbit Parallel 15 ns 54-TSOP II
