Infineon Technologies CYD36S36V18-200BGXC
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Synchronous |
| Memory Size | 36Mbit |
| Memory Organization | 1M x 36 |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 3.3 ns |
| Voltage - Supply | 1.42V ~ 1.58V, 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 484-FBGA |
| Supplier Device Package | 484-PBGA (27x27) |
| Base Product Number | CYD36S36 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 40 |
SRAM - Dual Port, Synchronous Memory IC 36Mbit Parallel 200 MHz 3.3 ns 484-PBGA (27x27)
