Infineon Technologies S29GL512S11WEIV19
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | GL-S |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mbit |
| Memory Organization | 32M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 60ns |
| Access Time | 110 ns |
| Voltage - Supply | 1.65V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Wafer |
| Base Product Number | S29GL512 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
| Standard Package | 25 |
FLASH - NOR Memory IC 512Mbit Parallel 110 ns Wafer
