Infineon Technologies S72XS256RE0AHBJ20
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | XS-R |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile, Volatile |
| Memory Format | FLASH, RAM |
| Technology | FLASH, DRAM |
| Memory Size | 256Mbit (FLASH), 256Mbit (DDR DRAM) |
| Memory Organization | - |
| Memory Interface | Parallel |
| Clock Frequency | 108 MHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 133-VFBGA |
| Supplier Device Package | 133-FBGA (8x8) |
| Base Product Number | S72XS256 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
| Standard Package | 1 |
FLASH, DRAM Memory IC 256Mbit (FLASH), 256Mbit (DDR DRAM) Parallel 108 MHz 133-FBGA (8x8)
