Infineon Technologies S80KS5122GABHI020
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | HYPERRAM™ |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | PSRAM |
| Technology | PSRAM (Pseudo SRAM) |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | HyperBus |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 35ns |
| Access Time | 35 ns |
| Voltage - Supply | 1.7V ~ 2V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 24-VBGA |
| Supplier Device Package | 24-FBGA (6x8) |
| Base Product Number | S80KS5122 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0028 |
| Standard Package | 338 |
PSRAM (Pseudo SRAM) Memory IC 512Mbit HyperBus 200 MHz 35 ns 24-FBGA (6x8)
