Infineon Technologies STK11C68-5C35M
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 64Kbit |
| Memory Organization | 8K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 35ns |
| Access Time | 35 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 28-CDIP (0.300", 7.62mm) |
| Supplier Device Package | 28-CDIP |
| Base Product Number | STK11C68 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A001A2C |
| HTSUS | 8542.32.0041 |
| Standard Package | 26 |
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 35 ns 28-CDIP
