ISSI, Integrated Silicon Solution Inc IS25WX512M-JHE-TR
| Parameters | |
|---|---|
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | SPI - Octal I/O |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.7V ~ 2V |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 24-TBGA |
| Supplier Device Package | 24-TFBGA (6x8) |
| Base Product Number | IS25WX512M |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
| Other Names | 706-IS25WX512M-JHE-TR |
| Standard Package | 2,500 |
| Mfr | ISSI, Integrated Silicon Solution Inc |
| Series | - |
FLASH Memory IC 512Mbit SPI - Octal I/O 200 MHz 24-TFBGA (6x8)
