Parameters |
Mfr |
ISSI, Integrated Silicon Solution Inc |
Series |
- |
Package |
Tray |
Product Status |
Active |
Memory Type |
Volatile |
Memory Format |
DRAM |
Technology |
RLDRAM 2 |
Memory Size |
288Mbit |
Memory Organization |
16M x 18 |
Memory Interface |
Parallel |
Clock Frequency |
400 MHz |
Write Cycle Time - Word, Page |
- |
Access Time |
20 ns |
Voltage - Supply |
1.7V ~ 1.9V |
Operating Temperature |
0°C ~ 70°C (TA) |
Mounting Type |
Surface Mount |
Package / Case |
144-TFBGA |
Supplier Device Package |
144-FCBGA (11x18.5) |
Base Product Number |
IS49NLC18160 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8542.32.0028 |
Standard Package |
104 |
RLDRAM 2 Memory IC 288Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)