Micron Technology Inc. MT29E4T08EYHBBG9-3:B

MT29E4T08EYHBBG9-3:B


  • Manufacturer: Micron Technology Inc.
  • CONEVO NO: MT29E4T08EYHBBG9-3:B
  • Package: -
  • Datasheet: -
  • Stock: In stock
  • Description: MT29E4T08EYHBBG9-3:B(Kg)

Details

Tags

Parameters
Mfr Micron Technology Inc.
Series -
Package Tray
Product Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Tbit
Memory Organization 512G x 8
Memory Interface Parallel
Clock Frequency 333 MHz
Write Cycle Time - Word, Page -
Voltage - Supply 2.5V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type -
Package / Case -
Supplier Device Package -
Base Product Number MT29E4T08
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Standard Package 980
FLASH - NAND Memory IC 4Tbit Parallel 333 MHz
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