Micron Technology Inc. MT47H512M4THN-3:E TR
| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0036 |
| Standard Package | 2,000 |
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 2Gbit |
| Memory Organization | 512M x 4 |
| Memory Interface | Parallel |
| Clock Frequency | 333 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 450 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 63-TFBGA |
| Supplier Device Package | 63-FBGA (8x10) |
| Base Product Number | MT47H512M4 |
| RoHS Status | ROHS3 Compliant |
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 63-FBGA (8x10)
