Micron Technology Inc. NAND02GW3B2DN6E

NAND02GW3B2DN6E


  • Manufacturer: Micron Technology Inc.
  • CONEVO NO: NAND02GW3B2DN6E
  • Package: 48-TFSOP (0.724", 18.40mm Width)
  • Datasheet: PDF
  • Stock: In stock
  • Description: NAND02GW3B2DN6E(Kg)

Details

Tags

Parameters
Mfr Micron Technology Inc.
Series -
Package Tray
Product Status Discontinued at Digi-Key
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP
Base Product Number NAND02G
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0051
Other Names -NAND02GW3B2DN6E
Standard Package 576
FLASH - NAND Memory IC 2Gbit Parallel 25 ns 48-TSOP
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