Micron Technology Inc. NAND256R3A2BZA6E

NAND256R3A2BZA6E


  • Manufacturer: Micron Technology Inc.
  • CONEVO NO: NAND256R3A2BZA6E
  • Package: 55-TFBGA
  • Datasheet: -
  • Stock: In stock
  • Description: NAND256R3A2BZA6E(Kg)

Details

Tags

Parameters
Mfr Micron Technology Inc.
Series -
Package Tray
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 256Mbit
Memory Organization 32M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 50ns
Access Time 50 ns
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 55-TFBGA
Supplier Device Package 55-VFBGA (8x10)
Base Product Number NAND256
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Standard Package 1,518
FLASH - NAND Memory IC 256Mbit Parallel 50 ns 55-VFBGA (8x10)
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