Micron Technology Inc. NAND256R3A2BZA6E
| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 256Mbit |
| Memory Organization | 32M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 50ns |
| Access Time | 50 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 55-TFBGA |
| Supplier Device Package | 55-VFBGA (8x10) |
| Base Product Number | NAND256 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
| Standard Package | 1,518 |
FLASH - NAND Memory IC 256Mbit Parallel 50 ns 55-VFBGA (8x10)
