Renesas Electronics America Inc IDT70T631S10DD
| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Size | 4.5Mbit |
| Memory Organization | 256K x 18 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 10ns |
| Access Time | 10 ns |
| Voltage - Supply | 2.4V ~ 2.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 144-LQFP Exposed Pad |
| Supplier Device Package | 144-TQFP (20x20) |
| Base Product Number | IDT70T631 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Other Names | 70T631S10DD |
| Standard Package | 6 |
SRAM - Dual Port, Asynchronous Memory IC 4.5Mbit Parallel 10 ns 144-TQFP (20x20)
