Renesas Electronics America Inc IDT71P79804S267BQ
| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, DDR II |
| Memory Size | 18Mbit |
| Memory Organization | 1M x 18 |
| Memory Interface | Parallel |
| Clock Frequency | 267 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 6.3 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-TBGA |
| Supplier Device Package | 165-CABGA (13x15) |
| Base Product Number | IDT71P79 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Other Names | 71P79804S267BQ |
| Standard Package | 136 |
SRAM - Synchronous, DDR II Memory IC 18Mbit Parallel 267 MHz 6.3 ns 165-CABGA (13x15)
