Rohm Semiconductor MSM5117400F-60J3-7
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| Parameters | |
|---|---|
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | DRAM |
| Memory Size | 16Mbit |
| Memory Organization | 4M x 4 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 110ns |
| Access Time | 30 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Base Product Number | MSM51 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| ECCN | EAR99 |
| HTSUS | 8542.32.0002 |
| Standard Package | 1,890 |
DRAM Memory IC 16Mbit Parallel 30 ns
