Cypress Semiconductor Corp CY10E422L-7DC
| Parameters | |
|---|---|
| Mfr | Cypress Semiconductor Corp |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 1Kbit |
| Memory Organization | 256 x 4 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 7ns |
| Access Time | 7 ns |
| Voltage - Supply | 4.94V ~ 5.46V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 24-CDIP (0.400", 10.16mm) |
| Supplier Device Package | 24-SBDIP |
| Base Product Number | CY10E422 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Affected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
SRAM - Asynchronous Memory IC 1Kbit Parallel 7 ns 24-SBDIP
