Cypress Semiconductor Corp CY10E484L-7DCQ
| Parameters | |
|---|---|
| Mfr | Cypress Semiconductor Corp |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 16Kbit |
| Memory Organization | 4K x 4 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 8ns |
| Access Time | 7 ns |
| Voltage - Supply | 4.94V ~ 5.46V |
| Operating Temperature | 0°C ~ 75°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 28-CDIP (0.400", 10.16mm) |
| Supplier Device Package | 28-CDIP |
| Base Product Number | CY10E484 |
| RoHS Status | Not applicable |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | Vendor Undefined |
| ECCN | EAR99 |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
SRAM - Asynchronous Memory IC 16Kbit Parallel 7 ns 28-CDIP
