Cypress Semiconductor Corp CY7C1370DV25-200BZI
| Parameters | |
|---|---|
| Mfr | Cypress Semiconductor Corp |
| Series | NoBL™ |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 18Mbit |
| Memory Organization | 512K x 36 |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 3 ns |
| Voltage - Supply | 2.375V ~ 2.625V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-LBGA |
| Supplier Device Package | 165-FBGA (13x15) |
| Base Product Number | CY7C1370 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Affected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3 ns 165-FBGA (13x15)
