Parameters |
Mfr |
Cypress Semiconductor Corp |
Series |
NoBL™ |
Package |
Bulk |
Product Status |
Active |
Memory Type |
Volatile |
Memory Format |
SRAM |
Technology |
SRAM - Synchronous, SDR |
Memory Size |
18Mbit |
Memory Organization |
1M x 18 |
Memory Interface |
Parallel |
Clock Frequency |
167 MHz |
Write Cycle Time - Word, Page |
- |
Access Time |
3.4 ns |
Voltage - Supply |
2.375V ~ 2.625V |
Operating Temperature |
0°C ~ 70°C (TA) |
Base Product Number |
CY7C1372 |
RoHS Status |
Not applicable |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
REACH Status |
Vendor Undefined |
ECCN |
3A991B2A |
HTSUS |
8542.32.0041 |
Standard Package |
1 |
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 167 MHz 3.4 ns