Cypress Semiconductor Corp S34ML04G200BHI000
| Parameters | |
|---|---|
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 25ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA |
| Supplier Device Package | 63-BGA (11x9) |
| Base Product Number | S34ML04 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
| Other Names | 2832-S34ML04G200BHI000 |
| Standard Package | 210 |
| Mfr | Cypress Semiconductor Corp |
| Series | ML-2 |
FLASH - NAND Memory IC 4Gbit Parallel 63-BGA (11x9)
