GigaDevice Semiconductor (HK) Limited GD25S512MDBIGY

GD25S512MDBIGY


  • Manufacturer: GigaDevice Semiconductor (HK) Limited
  • CONEVO NO: GD25S512MDBIGY
  • Package: 24-TBGA
  • Datasheet: PDF
  • Stock: In stock
  • Description: GD25S512MDBIGY(Kg)

Details

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Parameters
Mfr GigaDevice Semiconductor (HK) Limited
Series -
Package Tray
Product Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface SPI - Quad I/O
Clock Frequency 104 MHz
Write Cycle Time - Word, Page 50µs, 2.4ms
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 24-TBGA
Supplier Device Package 24-TFBGA (6x8)
Base Product Number GD25S512
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Standard Package 4,800
FLASH - NOR Memory IC 512Mbit SPI - Quad I/O 104 MHz 24-TFBGA (6x8)
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