Infineon Technologies 2ED2109S06FXUMA1
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Conevo-Key Programmable | Not Verified |
| Driven Configuration | Half-Bridge |
| Channel Type | Synchronous |
| Number of Drivers | 1 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 1.1V, 1.7V |
| Current - Peak Output (Source, Sink) | 290mA, 700mA |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 650 V |
| Rise / Fall Time (Typ) | 100ns, 35ns |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | PG-DSO-8-53 |
| Base Product Number | 2ED2109 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.39.0001 |
| Standard Package | 2,500 |
Half-Bridge Gate Driver IC Non-Inverting PG-DSO-8-53
