Infineon Technologies CY14B104NA-BA20XI
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 4Mbit |
| Memory Organization | 256K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 20ns |
| Access Time | 20 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-FBGA (6x10) |
| Base Product Number | CY14B104 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 598 |
NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 20 ns 48-FBGA (6x10)
