Infineon Technologies CY14B116N-BA25XI
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 16Mbit |
| Memory Organization | 1M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 60-LFBGA |
| Supplier Device Package | 60-FBGA (10x18) |
| Base Product Number | CY14B116 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 112 |
NVSRAM (Non-Volatile SRAM) Memory IC 16Mbit Parallel 25 ns 60-FBGA (10x18)
