Infineon Technologies CY15B101N-ZS60XM
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q100, F-RAM™ |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 1Mbit |
| Memory Organization | 64K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 90ns |
| Access Time | 90 ns |
| Voltage - Supply | 2V ~ 3.6V |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 44-TSOP II |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN | 3A001A2C |
| HTSUS | 8542.32.0071 |
| Standard Package | 270 |
FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 90 ns 44-TSOP II
