Infineon Technologies CY7C106D-10VXI
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 1Mbit |
| Memory Organization | 256K x 4 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 10ns |
| Access Time | 10 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 28-BSOJ (0.400", 10.16mm Width) |
| Supplier Device Package | 28-SOJ |
| Base Product Number | CY7C106 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2B |
| HTSUS | 8542.32.0041 |
| Other Names | -CY7C106D |
| Standard Package | 26 |
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 28-SOJ
