Infineon Technologies CY7C1356C-200AXI
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | NoBL™ |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 9Mbit |
| Memory Organization | 512K x 18 |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 3.2 ns |
| Voltage - Supply | 3.135V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 100-LQFP |
| Supplier Device Package | 100-TQFP (14x20) |
| Base Product Number | CY7C1356 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 72 |
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.2 ns 100-TQFP (14x20)
