Infineon Technologies CY7C1357C-100BZC
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | NoBL™ |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 9Mbit |
| Memory Organization | 512K x 18 |
| Memory Interface | Parallel |
| Clock Frequency | 100 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 7.5 ns |
| Voltage - Supply | 3.135V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-LBGA |
| Supplier Device Package | 165-FBGA (13x15) |
| Base Product Number | CY7C1357 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 136 |
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 100 MHz 7.5 ns 165-FBGA (13x15)
