Infineon Technologies CY7S1061GE30-10BVM
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 16Mbit |
| Memory Organization | 1M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 10ns |
| Access Time | 10 ns |
| Voltage - Supply | 2.2V ~ 3.6V |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-VFBGA |
| Supplier Device Package | 48-VFBGA (6x8) |
| Base Product Number | CY7S1061 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A001A2C |
| HTSUS | 8542.32.0041 |
| Standard Package | 2,400 |
SRAM - Synchronous, SDR Memory IC 16Mbit Parallel 10 ns 48-VFBGA (6x8)
