Infineon Technologies CYDD09S36V18-200BBXC
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Synchronous |
| Memory Size | 9Mbit |
| Memory Organization | 128K x 36 x 2 (DDR) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 500 ps |
| Voltage - Supply | 1.42V ~ 1.58V, 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 256-LBGA |
| Supplier Device Package | 256-FBGA (17x17) |
| Base Product Number | CYDD |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 5 (48 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 84 |
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 200 MHz 500 ps 256-FBGA (17x17)
