Parameters |
Mfr |
Infineon Technologies |
Series |
- |
Package |
Tray |
Product Status |
Obsolete |
Memory Type |
Volatile |
Memory Format |
SRAM |
Technology |
SRAM - Dual Port, Synchronous |
Memory Size |
18Mbit |
Memory Organization |
256K x 36 x 2 (DDR) |
Memory Interface |
Parallel |
Clock Frequency |
200 MHz |
Write Cycle Time - Word, Page |
- |
Access Time |
500 ps |
Voltage - Supply |
1.42V ~ 1.58V, 1.7V ~ 1.9V |
Operating Temperature |
0°C ~ 70°C (TA) |
Mounting Type |
Surface Mount |
Package / Case |
256-LBGA |
Supplier Device Package |
256-FBGA (17x17) |
Base Product Number |
CYDD |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
REACH Status |
REACH Unaffected |
ECCN |
3A991B2B |
HTSUS |
8542.32.0041 |
Standard Package |
84 |
SRAM - Dual Port, Synchronous Memory IC 18Mbit Parallel 200 MHz 500 ps 256-FBGA (17x17)