Infineon Technologies CYDM256B16-55BVXI
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | MoBL® |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, MoBL |
| Memory Size | 256Kbit |
| Memory Organization | 16K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 55ns |
| Access Time | 55 ns |
| Voltage - Supply | 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 100-VFBGA |
| Supplier Device Package | 100-VFBGA (6x6) |
| Base Product Number | CYDM |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0041 |
| Standard Package | 429 |
SRAM - Dual Port, MoBL Memory IC 256Kbit Parallel 55 ns 100-VFBGA (6x6)
