Infineon Technologies FM22L16-55-TG
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | F-RAM™ |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 4Mbit |
| Memory Organization | 256K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 110ns |
| Access Time | 110 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 44-TSOP II |
| Base Product Number | FM22L16 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0071 |
| Standard Package | 135 |
FRAM (Ferroelectric RAM) Memory IC 4Mbit Parallel 110 ns 44-TSOP II
