Parameters |
Mfr |
ISSI, Integrated Silicon Solution Inc |
Series |
Automotive, AEC-Q100 |
Package |
Tray |
Product Status |
Obsolete |
Memory Type |
Volatile |
Memory Format |
DRAM |
Technology |
SDRAM - DDR3 |
Memory Size |
4Gbit |
Memory Organization |
512M x 8 |
Memory Interface |
Parallel |
Clock Frequency |
1.066 GHz |
Write Cycle Time - Word, Page |
15ns |
Access Time |
20 ns |
Voltage - Supply |
1.425V ~ 1.575V |
Operating Temperature |
0°C ~ 95°C (TC) |
Mounting Type |
Surface Mount |
Package / Case |
78-TFBGA |
Supplier Device Package |
78-TWBGA (9x10.5) |
Base Product Number |
IS43TR85120 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8542.32.0036 |
Other Names |
706-IS43TR85120A-093NBL |
Standard Package |
220 |
SDRAM - DDR3 Memory IC 4Gbit Parallel 1.066 GHz 20 ns 78-TWBGA (9x10.5)