Parameters |
Mfr |
ISSI, Integrated Silicon Solution Inc |
Series |
Automotive, AEC-Q100 |
Package |
Bulk |
Product Status |
Active |
Memory Type |
Volatile |
Memory Format |
DRAM |
Technology |
SDRAM - DDR3 |
Memory Size |
1Gbit |
Memory Organization |
64M x 16 |
Memory Interface |
Parallel |
Clock Frequency |
933 MHz |
Write Cycle Time - Word, Page |
15ns |
Access Time |
20 ns |
Voltage - Supply |
1.425V ~ 1.575V |
Operating Temperature |
-40°C ~ 105°C (TC) |
Mounting Type |
Surface Mount |
Package / Case |
96-TFBGA |
Supplier Device Package |
96-TWBGA (9x13) |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Other Names |
706-IS46TR16640C-107MBLA2 |
Standard Package |
190 |
SDRAM - DDR3 Memory IC 1Gbit Parallel 933 MHz 20 ns 96-TWBGA (9x13)