ISSI, Integrated Silicon Solution Inc IS49NLS18160-25WBLI
| Parameters | |
|---|---|
| Mfr | ISSI, Integrated Silicon Solution Inc |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | RLDRAM 2 |
| Memory Size | 288Mbit |
| Memory Organization | 16M x 18 |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 20 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 144-TFBGA |
| Supplier Device Package | 144-TWBGA (11x18.5) |
| Base Product Number | IS49NLS18160 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0028 |
| Standard Package | 104 |
RLDRAM 2 Memory IC 288Mbit Parallel 400 MHz 20 ns 144-TWBGA (11x18.5)
