ISSI, Integrated Silicon Solution Inc IS61LPS25636B-200TQLI
| Parameters | |
|---|---|
| Mfr | ISSI, Integrated Silicon Solution Inc |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 9Mbit |
| Memory Organization | 256K x 36 |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 3.1 ns |
| Voltage - Supply | 3.135V ~ 3.465V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 100-LQFP |
| Supplier Device Package | 100-LQFP (14x20) |
| Base Product Number | IS61LPS25636 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Other Names | 706-1538 |
| Standard Package | 72 |
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 100-LQFP (14x20)
